Microelectronic Fabrication Processes Assignment Help

Microfabrication is the process of fabricating miniature structures of micrometre scales and smaller. The microelectronic devices are created through a series of steps which include deposition of thin films of material, patterning of these thin films, selective etching of thin films, and modification of these materials. At AnswersPortals we have experts who can work on your Membrane Science and Engineering assignment with full dedication. Our customer service department is open 24/7, so you can get help before, during, and after you have placed an order. We provide the best Membrane Science and Engineering help. We have been working in this field from past many years. 

Students can get in touch with us to avail our Membrane Science and Engineering services. Our Membrane Science and Engineering homework help topics which are mentioned below have been designed to assist you through all your Membrane Science and Engineering homework problems:

  • Advanced Lithography
  • Alignment and test structures in masks
  • Anti reflective coating (ARC)
  • Chip Manufacturing Process, FEOL and BEOL
  • Clean Room Technology and Silicon Wafer Production
    • Basic outline of fabrication process: with to real structures
    • Basic silicon wafer parameters, solid solubility of dopants in silicon, defects, and basic economics of operations
    • History of semiconductor devices: diodes, transistors, Germanium/Silicon transition, monolithic integrated circuits
    • Projected trends in Fabrication
    • Silicon wafers; Crystallography, Production and Defects:
    • Theory and operations for contamination elimination, and safety issues
    • Theory behind clean room operations
  • Diffusion Processes & Ion Implantation  
    • Concentration profile
    • Constant source and limited source diffusion
    • Dopant redistribution
    • Gettering
    • Interstitial and substitutional diffusion
    • Junction depth
    • Lateral diffusion
    • Rapid thermal annealing
  • Dry etching
    • Aluminum etch
    • Anisotropic etch
    • Chemical Mechanical planarization (CMP) basics
    • Dishing
    • Dummy fill
    • Electrostatic discharge (ESD)
    • Equipment details and operation
    • Erosion
    • Issues in Shallow Trench Isolation
    • Oxide Polish and Copper Polish
    • Plasma
    • Reactive ion etching (RIE)
    • Slotting
    • Veil formation and de-veil
  • FEOL
    • Band gap MOS capacitor
    • MOS transistor structure for enhancement mode devices.
    • Semiconductor electron band structure
  • Ion printing
  • Ion implantation
    • Accelerator
    • Analyzer
    • Channeling and methods to prevent channeling.
    • Detailed Equipment description
    • Elastic and inelastic collisions
    • Ion source
    • Scanning
    • Target chamber
    • Transverse straggle
  • Layout, hierarchy vs flat file
  • Levels and layers in layout file
  • Lithography details:
    • Dark field mask
    • Positive resist and its advantages
    • Pre-exposure bake, exposure, soft bake, developing and hard bake
    • Process details including resist coating
    • Projection printing
    • Stepper vs scanner
  • Mask making with e beam
  • MOS transistor operation
    • Hot carrier effect
    • I-V curve
    • Lightly doped drain (LDD)
    • Pinch off
    • Scaling
  • Numerical aperture
  • Optical proximity correction (OPC)
  • Packaging, Yields, Processing Facility Setup and Silicon Foundries
  • Oxidation
    • Deal-Grove model
    • Effect of doping
    • Electro-chemical oxidation
    • Exponential growth regime
    • Native oxide
    • Solubility and diffusion of various species in oxide
    • Wet and dry oxidation
  • Process Integration
    • BEOL Issues
    • Cu vs Al metallization
    • Oxide vs low-k integrationPhase shift mask (PSM)
  • PhotoLithography
    • Alignment and test structures in masks.
    • Layout, hierarchy vs flat file
    • Levels and layers in layout file.
    • Lithography basics
    • Mask making with e-beam
  • Production issues
    • Accelerator, levelers, effect of seed layer, spin on coating
    • Atmospheric pressure (APCVD)
    • Atomic layer deposition (ALD) and molecular beam epitaxy (MBE)
    • Chemical vapor deposition (CVD) basics
    • Deposition of silicon
    • Depth of focus
    • Electrochemical deposition
    • Electro-migration vs grain size
    • Equipment description and operation details
    • Focus exposure matrix
    • Ionized metal plasma (IMP) sputtering
    • Mass transfer control and reaction kinetics control
    • Next generation litho (Extreme UV, XRay)
    • Partial field vs full field
    • Physical Vapor Deposition (PVD) basics
    • Plasma enhanced (PECVD)
    • Poly silicon, oxide, nitride and tungsten
    • Reactor description and operation
    • RF/magnetron sputtering
  • Wet etching
    • Anisotropic Si etch in KOH
    • Chemicals for oxide and nitride removal
    • Cleaning
    • Effect of dopants
    • Isotropic etch
    • Micro loading and process proximity correction
    • Photoresist development
    • Selectivity
  • Thermal Oxidation
  • Thin Film Deposition: Evaporation and Sputtering
  • Thin Film Deposition: Chemical Vapor Deposition
  • Tools and Techniques
    • AFM
    • FIB
    • SEM

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